Homray Semiconductor Technology

Benchmarking Infineon FD600R06ME3-S2
HST as the leading manufacturer of IGBT( Insulated Gate Bipolar Transistor) module, we supply medium power IGBT modules are designed for 600V/650V, 1200V and 1700V with rated current range 10A - 600A. An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package. The dies are normally connected in a selected electrical configuration such as half-bridge, 3-level, dual, chopper, booster, etc.